SI4420DY International Rectifier, SI4420DY Datasheet - Page 2

• Manufacturer Part Number: SI4420DY
• Description: MOSFET N-CH 30V 12.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4420DY

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 2240pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *SI4420DY

Si4420DY
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
R
I
GSS
d(on)
r
d(off)
f
S
SM
rr
DSS
V
fs
(BR)DSS
GS(th)
SD
iss
oss
rss
g
gs
gd
DS(on)
2
Repetitive rating; pulse width limited by
Pulse width
When mounted on FR4 Board, t 10 sec
(BR)DSS
max. junction temperature.
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Diode Conduction)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
300µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
R
Starting T
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
––– 0.028 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2240 –––
––– 1100 –––
–––
–––
–––
–––
1.0
30
G
= 25 , I
–––
–––
––– 0.009
––– 0.013
–––
–––
–––
––– -100
–––
150
–––
–––
8.7
29
52
12
15
10
55
47
52
J
= 25°C, L = 13mH
AS
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
1.0
5.0
50
1.1
2.3
78
78
= 8.9A. (See Figure 15)
V/°C
µA
nA
nC
ns
pF
ns
V
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
p-n junction diode.
T
T
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= 12.5A
= 1.0A
= 25°C, I
= 25°C, I
= 6.0
= 15 ,
= V
= 15V, I
= 30V, V
= 30V, V
= 15V
= 15V
= 0V, I
= 10V, I
= 4.5V, I
= -20V
= 20V
= 10V, See Fig. 6
= 15V
= 0V
GS
Conditions
, I
D
S
F
D
D
D
Conditions
D
= 250µA
GS
GS
= 2.3A, V
= 2.3A
= 250µA
= 12.5A
= 12.5A
= 10.5A
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 55°C
= 0V
G
D
S