IRF9530NL International Rectifier, IRF9530NL Datasheet - Page 2
![MOSFET P-CH 100V 14A TO-262](/photos/5/32/53250/to-262_sml.jpg)
IRF9530NL
Manufacturer Part Number
IRF9530NL
Description
MOSFET P-CH 100V 14A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9530NS.pdf
(11 pages)
Specifications of IRF9530NL
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
760pF @ 25V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9530NL
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF9530NL
Manufacturer:
IR
Quantity:
12 500
Electrical Characteristics @ T
IRF9530NS/L
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
Source-Drain Ratings and Characteristics
I
I
L
Notes:
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
DSS
GSS
S
d(on)
r
d(off)
f
on
SM
rr
S
V
fs
For recommended footprint and soldering techniques refer to application note #AN-994.
(BR)DSS
DS(on)
GS(th)
g
gd
iss
oss
rss
gs
SD
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
Starting T
I
T
SD
G
J
= 25 , I
175°C
/ T
-8.4A, di/dt
J
J
Drain-to-Source Leakage Current
Internal Source Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C, L =7.0mH
AS
= -8.4A. (See Figure 12)
-490A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
-100
Uses IRF9530N data and test conditions
Pulse width
–––
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.2
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
-0.11 –––
–––
––– 0.20
–––
–––
–––
––– -250
–––
–––
–––
–––
760
260
170
––– -100
–––
–––
–––
130
650
15
58
45
46
7.5
–––
-4.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
-1.6
100
190
970
-25
8.3
58
-14
-56
300µs; duty cycle
32
V/°C
µA
nC
nH
nA
ns
pF
ns
nC
V
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
I
V
V
I
R
R
Between lead,
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = -100A/µs
integral reverse
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= -8.4A
= -8.4A
= 25°C, I
= 25°C, I
= 9.1
= 6.2
= V
= -80V, V
= 0V, I
= -10V, I
= -50V, I
= -100V, V
= 20V
= -20V
= -80V
= -10V, See Fig. 6 and 13
= 0V
= -25V
= -50V
2%.
GS
, I
See Fig. 10
D
F
S
D
= -250µA
D
= -8.4A
Conditions
D
Conditions
= -8.4A, V
GS
= -250µA
= -8.4A
= -8.4A
GS
= 0V, T
= 0V
D
= -1mA
GS
G
J
= 150°C
= 0V
S
+L
D
S
D
)