IRLML5203 International Rectifier, IRLML5203 Datasheet - Page 2
IRLML5203
Manufacturer Part Number
IRLML5203
Description
MOSFET P-CH 30V 3A SOT-23
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLML5203.pdf
(10 pages)
Specifications of IRLML5203
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
98 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
510pF @ 25V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLML5203
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IRLML5203GTRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRLML5203GTRPBF/H3J
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRLML5203TR
Manufacturer:
PERICOM
Quantity:
331
Part Number:
IRLML5203TR
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRLML5203TRPBF
Manufacturer:
IR
Quantity:
36 000
Part Number:
IRLML5203TRPBF
Manufacturer:
IR
Quantity:
20 000
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
SM
d(on)
d(off)
S
rr
r
f
DSS
fs
2
SD
(BR)DSS
GS(th)
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Pulse width ≤ 400µs; duty cycle ≤
Repetitive rating; pulse width limited by
max. junction temperature.
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
-1.0
––– 0.019 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
Surface mounted on FR-4 board, t ≤
3.1
PROVISIONAL
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
510
–––
9.5
2.3
1.6
17
12
12
18
88
52
71
43
–––
-2.5
-1.0
-5.0
100
–––
–––
–––
–––
–––
-1.2
–––
–––
–––
165
3.5
2.4
14
18
98
26
1.3
24
V/°C
mΩ
nC
nC
pF
ns
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs
showing the
T
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -3.0A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= V
= -10V, I
= -24V, V
= -24V, V
= -24V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V
= -15V
= -10V
= 0V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
D
= -1.3A, V
= -1.3A
D
GS
GS
= -250µA
= -3.0A
= -3.0A
= -2.6A
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V
S
D