IRF1010ESTRR International Rectifier, IRF1010ESTRR Datasheet
IRF1010ESTRR
Specifications of IRF1010ESTRR
Related parts for IRF1010ESTRR
IRF1010ESTRR Summary of contents
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Advanced Process Technology l l Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l l Fast Switching Fully Avalanche Rated l Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low ...
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IRF1010ES/IRF1010EL Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4. 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ...
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IRF1010ES/IRF1010EL 6000 0V, C iss = rss = C gd 5000 C oss = Ciss 4000 3000 Coss 2000 Crss 1000 0 1 ...
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L IMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 ...
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IRF1010ES/IRF1010EL Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q ...
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D.U.T + - Reverse Polarity of D.U.T for P-Channel Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** V Fig 14. For N-channel www.irf.com IRF1010ES/IRF1010EL Peak Diode ...
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IRF1010ES/IRF1010EL 2 D Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 ...
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TO-262 Package Outline TO-262 Part Marking Information www.irf.com IRF1010ES/IRF1010EL 9 ...
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IRF1010ES/IRF1010EL 2 D Pak Tape & Reel Information TIO ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...