IRF1405STRR International Rectifier, IRF1405STRR Datasheet - Page 2

• Manufacturer Part Number: IRF1405STRR
• Description: MOSFET N-CH 55V 131A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1405STRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 131A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 5480pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
I
I
I
I
V
t
Q
t
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
L
L
DSS
SM
GSS
S
rr
on
d(on)
r
d(off)
f
2
fs
D
S
SD
(BR)DSS
GS(th)
rr
DS(on)
gs
gd
iss
oss
rss
oss
oss
oss
g
(BR)DSS
eff.
/∆T
J
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
Internal Drain Inductance
Internal Source Inductance
Parameter
Parameter
J
= 25°C (unless otherwise specified)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.057 –––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
–––
–––
–––
–––
–––
55
69
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
5480 –––
1210 –––
5210 –––
1500 –––
–––
–––
–––
250
–––
–––
–––
–––
–––
–––
––– -200
170
190
130
110
280
900
4.6
4.5
88
44
62
13
7.5
131†
–––
130
380
–––
–––
250
200
260
–––
–––
–––
–––
–––
–––
–––
1.3
5.3
4.0
680
20
66
93
V/°C
mΩ
nC
nC
nH
µA
nA
ns
pF
ns
V
V
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
V
V
V
V
V
I
V
V
V
V
Reference to 25°C, I
V
V
V
V
V
I
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
ƒ = 1.0MHz, See Fig. 5
V
V
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 101A
= 101A
= 25°C, I
= 25°C, I
= 1.1Ω
= 10V, I
= 25V, I
= 55V, V
= 44V, V
= 44V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V„
= 38V
= 10V „
= 0V
= 0V, V
= 0V, V
= 0V, V
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
GS
GS
= 101A, V
= 101A
Conditions
= 250µA
= 110A
= 101A „
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
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D
= 1mA
GS
J
= 150°C
G
= 0V
G
S
+L
„
D
D
S
)
S
D