IRF9530NSTRR International Rectifier, IRF9530NSTRR Datasheet - Page 5

• Manufacturer Part Number: IRF9530NSTRR
• Description: MOSFET P-CH 100V 14A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9530NSTRR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 760pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

14
12
10
0 . 0 1
8
6
4
2
0
0.1
1 0
0 . 0 0 0 0 1
25
1
Fig 9. Maximum Drain Current Vs.
D = 0 .5 0
0 .0 5
0 .2 0
0 .1 0
0 .0 2
0 .0 1
50
T , Case Temperature ( C)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
(T H E R M A L R E S P O N S E )
C
Case Temperature
S IN G L E P U L S E
75
0 . 0 0 0 1
100
125
t , R e c ta n g ula r P u lse D u ratio n (s e c )
°
1
150
0 . 0 0 1
175
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
GS
DS
0 . 0 1
R
Pulse Width
Duty Factor
G
-10V
t
V
d(on)
N o te s:
1 . D u ty fa c to r D = t
2. P e a k T = P
GS
V
IRF9530NS/L
DS
t
r
J
µs
D M
x Z
0.1
1
D.U.T.
/ t
th JC
2
P
R
D M
t
d(off)
D
+ T
C
t
1
t
t
f
2
+
-
V
DD
1
A