IRLU3714 International Rectifier, IRLU3714 Datasheet - Page 3

MOSFET N-CH 20V 36A I-PAK

IRLU3714

Manufacturer Part Number
IRLU3714
Description
MOSFET N-CH 20V 36A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLU3714

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
9.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
670pF @ 10V
Power - Max
47W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLU3714

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Part Number
Manufacturer
Quantity
Price
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Manufacturer:
TOSHIBA
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Part Number:
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Manufacturer:
IR
Quantity:
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1000.00
100.00
10000
10.00
1000
0.01
1.00
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
0.1
10
1
0.1
2.0
TOP
BOTTOM 2.0V
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
VGS
T J = 25°C
15V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
4.0
1
2.0V
20µs PULSE WIDTH
Tj = 25°C
6.0
V DS = 15V
20µs PULSE WIDTH
T J = 175°C
10
8.0
10.0
100
1000
100
0.1
IRLR3714/IRLU3714
10
Fig 2. Typical Output Characteristics
1
2.5
2.0
1.5
1.0
0.5
0.0
0.1
Fig 4. Normalized On-Resistance
-60
TOP
BOTTOM 2.0V

I
D
-40
=
36A
V DS , Drain-to-Source Voltage (V)
VGS
-20
T , Junction Temperature
15V
10V
J
4.5V
3.0V
2.7V
2.5V
2.2V
Vs. Temperature
0
1
20
2.0V
40
20µs PULSE WIDTH
Tj = 175°C
60
80
10
100 120 140 160 180

V
GS
( C)
°
=
10V
3
100

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