IRLR3715 International Rectifier, IRLR3715 Datasheet

MOSFET N-CH 20V 54A DPAK

IRLR3715

Manufacturer Part Number
IRLR3715
Description
MOSFET N-CH 20V 54A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR3715

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
54A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1060pF @ 10V
Power - Max
3.8W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLR3715

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Company
Part Number
Manufacturer
Quantity
Price
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IRLR3715
Manufacturer:
IR
Quantity:
5 000
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INTERNATIONAL RECTIFIER
Quantity:
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Manufacturer:
IR
Quantity:
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Part Number:
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Manufacturer:
IR
Quantity:
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Part Number:
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Manufacturer:
IR
Quantity:
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Part Number:
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Part Number:
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Manufacturer:
IR
Quantity:
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Company:
Part Number:
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Quantity:
50 000
Part Number:
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Manufacturer:
IR
Quantity:
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Company:
Part Number:
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Quantity:
25 780
Thermal Resistance
l
l
l
Absolute Maximum Ratings
l
l
Benefits
www.irf.com
Notes  through
Applications
R
R
R
Symbol
V
V
I
I
I
P
P
T
D
D
DM
J
DS
GS
D
D
JC
JA
JA
and Current
@ T
@ T
, T
Converters with Synchronous Rectification
for Telecom and Industrial Use
Ultra-Low Gate Impedance
Very Low R
Fully Characterized Avalanche Voltage
High Frequency Isolated DC-DC
High Frequency Buck Converters for
@T
@T
Computer Processor Power
STG
C
C
C
A
= 25°C
= 100°C
= 25°C
= 25°C
DS(on)
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Linear Derating Factor
are on page 10
at 4.5V V
Parameter
Parameter
GS

SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
DSS
20V
Typ.
IRLR3715
–––
–––
–––
R
D-Pak
HEXFET
DS(on)
-55 to + 175
14m
Max.
± 20
54
38
210
0.48
3.8
20
71
max
®
IRLU3715
Power MOSFET
Max.
I-Pak
110
2.1
50
IRLR3715
IRLU3715
PD - 94177
54A
I
D
Units
Units
°C/W
W/°C
°C
W
W
V
A
V
1
06/28/01

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IRLR3715 Summary of contents

Page 1

... GS @ 10V GS @ 10V GS  … … 94177 IRLR3715 IRLU3715 ® HEXFET Power MOSFET R max I DS(on) D 14m 54A D-Pak I-Pak IRLR3715 IRLU3715 Max. Units 20 ± 20 „ 54 „ 38 210 71 W 3.8 W 0.48 W/°C - 175 °C Typ. Max. Units ––– 2.1 ––– ...

Page 2

IRLR/U3715 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

VGS TOP 15V 10V 4.5V 3.5V 3.3V 3.0V 100 2.7V BOTTOM 2. 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ...

Page 4

IRLR/U3715 10000 0V, C iss = rss = oss = Ciss 1000 Coss Crss 100 ...

Page 5

L IMITED BY PACKAGE 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05  ...

Page 6

IRLR/U3715 Fig 12a. Unclamped Inductive Test Circuit Fig ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET ...

Page 8

IRLR/U3715 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (.2 0 ...

Page 9

I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (. ...

Page 10

IRLR/U3715 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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