IRF5803 International Rectifier, IRF5803 Datasheet - Page 2
IRF5803
Manufacturer Part Number
IRF5803
Description
MOSFET P-CH 40V 3.4A 6-TSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF5803.pdf
(9 pages)
Specifications of IRF5803
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
112 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
37nC @ 10V
Input Capacitance (ciss) @ Vds
1110pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
Micro6™(TSOP-6)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF5803TR
Manufacturer:
IR
Quantity:
2 746
Company:
Part Number:
IRF5803TRPBF
Manufacturer:
IR
Quantity:
30 000
Part Number:
IRF5803TRPBF
Manufacturer:
IR
Quantity:
20 000
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
IRF5803
Notes:
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
SM
S
rr
d(on)
r
d(off)
f
DSS
I
V
fs
(BR)DSS
GS(th)
GSS
SD
2
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Repetitive rating; pulse width limited by
Pulse width
max. junction temperature.
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
400µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1110 –––
–––
–––
–––
–––
–––
–––
-40
4.0
Surface mounted on 1 in square Cu board
0.03
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
550
–––
–––
–––
4.5
3.5
25
43
88
50
93
73
27
34
-1.2
–––
–––
-3.0
–––
100
–––
–––
–––
–––
–––
–––
112
190
-10
-25
6.8
5.3
-2.0
37
40
-27
50
V/°C
m
µA
nA
nC
nC
ns
pF
ns
V
V
V
S
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 100kHz
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = -100A/µs
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -3.4A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0
= 0V, I
= -10V, I
= -4.5V, I
= V
= -10V, I
= -32V, V
= -32V, V
= -20V
= 20V
= -20V
= -10V
= -20V
= -10V
= 0V
= -25V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
D
= -2.0A
= -2.0A, V
D
GS
GS
= -250µA
= -3.4
= -3.4A
= -2.7A
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V
D
S