IRFR3711 International Rectifier, IRFR3711 Datasheet

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... GS g Typ h ––– gh ––– h ––– PD- 94061B IRFR3711 IRFU3711 HEXFET Power MOSFET R max I DS(on) 6.5mΩ 110A D-Pak I-Pak IRFR3711 IRFU3711 Max Units 20 V ± 100 440 2.5 W 120 0.96 W/°C -55 to +150 °C Max Units 1 ...

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Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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VGS TOP 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V 100 2.7V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° ...

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0V MHZ C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 1 ...

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LIMITED BY PACKAGE 100 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE ...

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D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

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D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * Fig 14. For N-Channel HEXFET www.irf.com + • • ƒ • - „ ...

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A - 5.46 (.215) 5.21 (.205) 4 6.22 (.245) 5.97 (.235) 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 0.89 (.035) 3X 0.64 (.025) 1.14 (.045) 2X 0.25 (.010) 0.76 (.030) 2.28 ...

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A - 5.46 (.215) 5.21 (.205) 4 6.22 (.245) 1.52 (.060) 5.97 (.235) 1.15 (.045 2.28 (.090) 9.65 (.380) 1.91 (.075) 8.89 (.350) 1.14 (.045) 3X 0.89 (.035) 0.76 ...

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TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...