IRF7326D2 International Rectifier, IRF7326D2 Datasheet - Page 5

• Manufacturer Part Number: IRF7326D2
• Description: MOSFET P-CH 30V 3.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7326D2

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Continuous Drain (id) @ 25° C: -

www.irf.com
100
Fig 10. Typical On-Resistance Vs. Drain
0.1
10
0.0001
0.50
0.40
0.30
0.20
0.10
0.00
1
D = 0.50
0
0.20
0.10
0.05
0.02
0.01
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
2
-I
D
(THERMAL RESPONSE)
4
0.001
VGS = -4.5V
Current
, Drain Current (A)
SINGLE PULSE
6
8
Power Mosfet Characteristics
VGS = -10V
10
0.01
t , Rectangular Pulse Duration (sec)
1
12
14
0.1
Fig 11. Typical On-Resistance Vs. Gate
0.14
0.12
0.10
0.08
0.06
4
-V
1. Duty factor D = t / t
2. Peak T = P
Notes:
6
GS
1
, Gate-to-Source Voltage (V)
Voltage
J
8
DM
ID = -3.6A
x Z
1
10
thJA
P
2
10
DM
IRF7326D2
+ T
12
A
t
1
t
2
14
100
5
16