IRL3716 International Rectifier, IRL3716 Datasheet - Page 4

• Manufacturer Part Number: IRL3716
• Description: MOSFET N-CH 20V 180A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3716

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 79nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5090pF @ 10V
• Power - Max: 210W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL3716; Q1265959

IRL3716/3716S/3716L
100000
10000
4
1000
1000
100
0.1
100
10
1
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 175
J
Drain-to-Source Voltage
V
SD
V DS , Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
°
0.8
Forward Voltage
C
T = 25
V GS = 0V,
C iss
C rss = C gd
C oss = C ds + C gd
J
Crss
Coss
= C gs + C gd , C ds
1.4
Ciss
°
C
10
f = 1 MHZ
2.0
V
GS
= 0 V
SHORTED
2.6
100
10000
1000
100
10
1
Fig 8. Maximum Safe Operating Area
16
12
8
4
0
1
0
Tc = 25°C
Tj = 175°C
Single Pulse
I
Fig 6. Typical Gate Charge Vs.
D
=
V DS , Drain-toSource Voltage (V)
72A
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
30
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
60
10
V
DS
90
= 16V
www.irf.com
10msec
1msec
100µsec
120
100
150