IRF3000 International Rectifier, IRF3000 Datasheet - Page 3

• Manufacturer Part Number: IRF3000
• Description: MOSFET N-CH 300V 1.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3000

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 960mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 730pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3000; Q1439458

www.irf.com
Fig 3. Typical Transfer Characteristics
0.01
100.0
Fig 1. Typical Output Characteristics
100
0.1
10.0
10
1.0
0.1
1
0.1
5.0
TOP
BOTTOM 5.5V
V DS , Drain-to-Source Voltage (V)
T J = 150°C
V GS , Gate-to-Source Voltage (V)
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
1
6.0
T J = 25°C
5.5V
20µs PULSE WIDTH
Tj = 25°C
V DS = 50V
20µs PULSE WIDTH
10
7.0
100
8.0
100
0.1
10
Fig 2. Typical Output Characteristics
1
2.5
2.0
1.5
1.0
0.5
0.0
0.1
Fig 4. Normalized On-Resistance
-60
TOP
BOTTOM 5.5V
I
D
=
-40
1.6A
V DS , Drain-to-Source Voltage (V)
VGS
-20
T , Junction Temperature
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
J
Vs. Temperature
0
1
20
40
20µs PULSE WIDTH
Tj = 150°C
60
IRF3000
80
5.5V
10
100
V
GS
( C)
120
°
=
10V
140
3
100
160