IRLR8113 International Rectifier, IRLR8113 Datasheet - Page 4
![MOSFET N-CH 30V 94A DPAK](/photos/5/41/54121/21-dpak_to-225aa_sml.jpg)
IRLR8113
Manufacturer Part Number
IRLR8113
Description
MOSFET N-CH 30V 94A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLR8113.pdf
(12 pages)
Specifications of IRLR8113
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
94A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
32nC @ 4.5V
Input Capacitance (ciss) @ Vds
2920pF @ 15V
Power - Max
89W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLR8113
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1000.00
100.00
4
100000
10.00
10000
1.00
0.10
1000
100
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
T J = 175°C
Drain-to-Source Voltage
C rss
C iss
C oss
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
Forward Voltage
T J = 25°C
1.0
f = 1 MHZ
10
1.5
V GS = 0V
2.0
100
2.5
1000
100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
1
0
Fig 6. Typical Gate Charge vs.
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 12A
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
5
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V DS = 24V
V DS = 15V
10
15
20
www.irf.com
10msec
100µsec
1msec
25
100
30