IRF840 STMicroelectronics, IRF840 Datasheet
IRF840
Specifications of IRF840
Available stocks
Related parts for IRF840
IRF840 Summary of contents
Page 1
... Derating Factor dv/dt (1) Peak Diode Recovery voltage slope T Storage Temperature stg T Max. Operating Junction Temperature j (•)Pulse width limited by safe operating area June 2003 NEW DATASHEET ACCORDING TO PCN_DSG_2C14 - MARKING: IRF840@ N-CHANNEL 500V - 0. TO-220 I DS(on ™. The layout re- INTERNAL SCHEMATIC DIAGRAM Parameter = 0) ...
Page 2
... IRF840 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Drain-source ...
Page 3
... 10V GS Test Conditions Min 400V 4 10V G GS (see test circuit, Figure 5) Test Conditions Min di/dt = 100A/µ 100V 150° (see test circuit, Figure 5) Thermal Impedence IRF840 Typ. Max. Unit 29 4.9 nC 13.9 nC Typ. Max. Unit Typ. Max. Unit 1.6 V 384 ns 2.2 µ ...
Page 4
... IRF840 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
Page 5
... Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature IRF840 5/8 ...
Page 6
... IRF840 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
Page 7
... IRF840 MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 0.151 0.116 7/8 ...
Page 8
... IRF840 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...