IRF840 STMicroelectronics, IRF840 Datasheet

MOSFET N-CH 500V 8A TO-220

IRF840

Manufacturer Part Number
IRF840
Description
MOSFET N-CH 500V 8A TO-220
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of IRF840

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
832pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-2731-5

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DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns switching speed, gate
charge and ruggedness.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
June 2003
NEW DATASHEET ACCORDING TO PCN_DSG_2C14 - MARKING: IRF840@
IRF840
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
Symbol
dv/dt (1)
I
V
DM
P
V
V
T
DGR
I
I
TOT
T
GS
stg
DS
D
D
TYPE
j
( )
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.75
500 V
V
II is the evolution of the first
DSS
< 0.85
R
DS(on)
C
™.
GS
Parameter
= 25°C
GS
= 20 k )
The layout re-
= 0)
N-CHANNEL 500V - 0.75 - 8A TO-220
C
C
= 25°C
= 100°C
8 A
I
D
(1)I
SD
8A, di/dt 50A/µs, V
INTERNAL SCHEMATIC DIAGRAM
PowerMesh™II MOSFET
DD
–65 to 150
TO-220
Value
V
± 20
500
500
125
150
5.1
1.0
3.5
32
(BR)DSS
8
, T
1
j
2
3
T
IRF840
JMAX.
W/°C
Unit
V/ns
°C
°C
W
V
V
V
A
A
A
1/8

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IRF840 Summary of contents

Page 1

... Derating Factor dv/dt (1) Peak Diode Recovery voltage slope T Storage Temperature stg T Max. Operating Junction Temperature j (•)Pulse width limited by safe operating area June 2003 NEW DATASHEET ACCORDING TO PCN_DSG_2C14 - MARKING: IRF840@ N-CHANNEL 500V - 0. TO-220 I DS(on ™. The layout re- INTERNAL SCHEMATIC DIAGRAM Parameter = 0) ...

Page 2

... IRF840 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Drain-source ...

Page 3

... 10V GS Test Conditions Min 400V 4 10V G GS (see test circuit, Figure 5) Test Conditions Min di/dt = 100A/µ 100V 150° (see test circuit, Figure 5) Thermal Impedence IRF840 Typ. Max. Unit 29 4.9 nC 13.9 nC Typ. Max. Unit Typ. Max. Unit 1.6 V 384 ns 2.2 µ ...

Page 4

... IRF840 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature IRF840 5/8 ...

Page 6

... IRF840 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... IRF840 MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 0.151 0.116 7/8 ...

Page 8

... IRF840 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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