IRF530 STMicroelectronics, IRF530 Datasheet
IRF530
Specifications of IRF530
Available stocks
Related parts for IRF530
IRF530 Summary of contents
Page 1
... Peak Diode Recovery voltage slope dv/dt (2) Single Pulse Avalanche Energy Storage Temperature stg T Operating Junction Temperature j ( Pulse width limited by safe operating area. August 2002 NEW DATASHEET ACCORDING TO PCN DSG/CT/1C02 MARKING: IRF530 @. N-CHANNEL 100V - 0.115 R I DS(on isolated DC-DC INTERNAL SCHEMATIC DIAGRAM = 25° 100° ...
Page 2
... IRF530 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (*) ON Symbol Parameter V Gate Threshold Voltage ...
Page 3
... Load, Figure 80V I = 14A V = 10V Test Conditions Min 4 (Resistive Load, Figure 3) Test Conditions Min di/dt = 100A/µ 10V T = 150° (see test circuit, Figure 5) Thermal Impedance IRF530 Typ. Max. Unit 3.7 nC 4.7 nC Typ. Max. Unit Typ. Max. Unit 1 230 3/8 ...
Page 4
... IRF530 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
Page 5
... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics . Normalized on Resistance vs Temperature Normalized Breakdown Voltage vs Temperature . IRF530 5/8 ...
Page 6
... IRF530 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
Page 7
... IRF530 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 P011C ...
Page 8
... IRF530 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...