STW11NB80 STMicroelectronics, STW11NB80 Datasheet - Page 8

• Manufacturer Part Number: STW11NB80
• Description: MOSFET N-CH 800V 11A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STW11NB80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2789-5

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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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