STW80NE06-10 STMicroelectronics, STW80NE06-10 Datasheet
STW80NE06-10
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STW80NE06-10 Summary of contents
Page 1
... October 2000 N-CHANNEL 60V - 0.0085 - 80A TO-247 STripFET™ POWER MOSFET R I DS(on A(*) Parameter = 25° 100° 25°C C (1) I 80A, di/dt 300A/µ (*) Current limited by package STW80NE06- TO-247 INTERNAL SCHEMATIC DIAGRAM Value 60 60 ± 320 250 1.66 7 –65 to 175 175 (BR)DSS ...
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... STW80NE06-10 THERMAL DATA R Thermal Resistance Junction-case Max thj-case R Thermal Resistance Junction-ambient Max thj-amb R Thermal Resistance Case-sink Typ thj-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ...
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... Test Conditions = 4 10V G GS (see test circuit, Figure 5) Test Conditions Min 80A 80A, di/dt = 100A/µ 50V 150° (see test circuit, Figure 5) Thermal Impedence STW80NE06-10 Typ. Max. Unit 50 ns 150 ns 140 189 Min. Typ. Max. Unit 130 ns Typ. Max. Unit 80 A ...
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... STW80NE06-10 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature Normalized Drain-Source Breakdown vs Temperature STW80NE06-10 5/8 ...
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... STW80NE06-10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... M 2 inch MAX. MIN. TYP. 5.3 0.185 2.6 0.087 0.8 0.016 1.4 0.039 2.4 0.079 3.4 0.118 0.429 15.9 0.602 20.3 0.776 14.8 0.559 1.362 0.217 3 0.079 STW80NE06-10 MAX. 0.209 0.102 0.031 0.055 0.094 0.134 0.626 0.779 0.582 0.118 P025P 7/8 ...
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... STW80NE06-10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...