IRF3707ZCS International Rectifier, IRF3707ZCS Datasheet - Page 7
![MOSFET N-CH 30V 59A D2PAK](/photos/5/40/54080/21-d2pak_smd-220_sml.jpg)
IRF3707ZCS
Manufacturer Part Number
IRF3707ZCS
Description
MOSFET N-CH 30V 59A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF3707ZCS.pdf
(12 pages)
Specifications of IRF3707ZCS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.5 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
59A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Input Capacitance (ciss) @ Vds
1210pF @ 15V
Power - Max
57W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF3707ZCS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
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Manufacturer:
IR
Quantity:
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Part Number:
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Manufacturer:
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Part Number:
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Manufacturer:
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+
R
-
D.U.T
Fig 15.
+
-
•
•
•
•
SD
•
•
•
Vgs(th)
Qgs1 Qgs2
Vds
Fig 16. Gate Charge Waveform
-
G
HEXFET
+
V
Qgd
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Qgodr
V
P.W.
SD
= 5V for Logic Level Devices
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
Vgs
dv/dt
Forward Drop
di/dt
Id
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
7