IRFR3709Z International Rectifier, IRFR3709Z Datasheet - Page 4

• Manufacturer Part Number: IRFR3709Z
• Description: MOSFET N-CH 30V 86A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3709Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 86A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2330pF @ 15V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR3709Z

100000
4
10000
1000
1000
100
100
10
10
1
0
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
C oss
Drain-to-Source Voltage
C rss
C iss
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
Forward Voltage
T J = 25°C
1.0
f = 1 MHZ
10
1.5
V GS = 0V
2.0
100
2.5
1000
100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0
0
Fig 6. Typical Gate Charge vs.
I D = 12A
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
5
Q G Total Gate Charge (nC)
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 24V
V DS = 15V
10
10
15
100µsec
1msec
10msec
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100
20
1000
25