IRF3711Z International Rectifier, IRF3711Z Datasheet - Page 7

• Manufacturer Part Number: IRF3711Z
• Description: MOSFET N-CH 20V 92A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3711Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 92A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2150pF @ 10V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3711Z

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Fig 16. Gate Charge Test Circuit
‚
12V
+
-
V
GS
Same Type as D.U.T.
Current Regulator
D.U.T
.2µF
50KΩ
3mA
Current Sampling Resistors
Fig 15.
ƒ
+
-
•
•
•
•
.3µF
SD
I
G
•
•
•
D.U.T.
I
D
-
„
G
HEXFET
+
-
V
+
DS
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Vgs(th)
Qgs1 Qgs2
Vds
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 17. Gate Charge Waveform
P.W.
SD
DS
Waveform
Waveform
Qgd
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
Qgodr
di/dt
D =
Period
P.W.
Vgs
V
V
I
SD
GS
DD
=10V
Id
7