IRL3715Z International Rectifier, IRL3715Z Datasheet - Page 4

• Manufacturer Part Number: IRL3715Z
• Description: MOSFET N-CH 20V 50A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3715Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 870pF @ 10V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL3715Z

4
1000.0
10000
1000
100.0
100
10.0
1.0
0.1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
Coss
Crss
Ciss
T J = 25°C
10
1.0
f = 1 MHZ
V GS = 0V
1.5
2.0
100
1000
100
Fig 8. Maximum Safe Operating Area
10
12
10
1
8
6
4
2
0
Fig 6. Typical Gate Charge vs.
0
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 12A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q G Total Gate Charge (nC)
4
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
V DS = 20V
VDS= 10V
8
10
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12
100µsec
10msec
1msec
100
16