IRF620 STMicroelectronics, IRF620 Datasheet - Page 5

• Manufacturer Part Number: IRF620
• Description: MOSFET N-CH 200V 6A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of IRF620

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3135

IRF620 - IRF620FP
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
(see Figure 16)
SD
SD
DD
=6A, V
=6A,
Test conditions
=100V, Tj=150°C
GS
=0
Electrical characteristics
Min
Typ.
155
700
9
Max
1.5
24
6
Unit
µC
ns
A
A
V
A
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