STV160NF02LT4 STMicroelectronics, STV160NF02LT4 Datasheet
STV160NF02LT4
Specifications of STV160NF02LT4
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STV160NF02LT4 Summary of contents
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... LOW PROFILE, VERY LOW PARASITIC INDUCTANCE PowerSO-10 PACKAGE DESCRIPTION The STV160NF02L represents the second gener- ation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics ...
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STV160NF02L THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero ...
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ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter t Turn-on Delay Time d(on) t Rise Time r Q Total Gate Charge g Gate-Source Charge Q gs Gate-Drain Charge Q gd SWITCHING OFF Symbol Parameter t Turn-off-Delay Time d(off) Fall Time t ...
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STV160NF02L Output Characteristics Tranconductance Gate Charge vs Gate-source Voltage 4/8 Tranfer Characteristics Static Drain-Source On Resistance Capacitance Variations ...
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Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Basic Schematic For Motherboard VRM Whith Synchronous Rectification Normalized On Resistance vs Temperature Basic Schematic Mosfets Switch Used In Secondary Side Of a Froward Convert STV160NF02L 5/8 ...
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STV160NF02L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test ...
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PowerSO-10 MECHANICAL DATA mm DIM. MIN. TYP. A 3.35 A1 0.00 B 0.40 C 0.35 D 9.40 D1 7.40 e 1.27 E 9.30 E1 7.20 E2 7.20 E3 6.10 E4 5.90 F 1.25 h 0.50 H 13.80 L 1.20 q ...
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... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied ...