STB80NF55-08-1 STMicroelectronics, STB80NF55-08-1 Datasheet

MOSFET N-CH 55V 80A I2PAK

STB80NF55-08-1

Manufacturer Part Number
STB80NF55-08-1
Description
MOSFET N-CH 55V 80A I2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB80NF55-08-1

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
155nC @ 10V
Input Capacitance (ciss) @ Vds
3850pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-3516-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB80NF55-08-1
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB80NF55-08-1
Manufacturer:
ST
0
Table 1: General Features
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less
remarkable manufacturing reproducibility.
APPLICATIONS
Table 2: Order Codes
Table 3: ABSOLUTE MAXIMUM RATINGS
(
March 2005
.
STB80NF55-08/-1
STP80NF55-08
STB80NF55-08-1
STB80NF55-08T4
STP80NF55-08
TYPICAL R
LOW THRESHOLD DRIVE
HIGH CURRENT SWITCHING APPLICATION
AUTOMOTIVE ENVIRONMENT
Symbol
I
E
Pulse width limited by safe operating area.
DM
V
I
I
V
V
AS (1)
T
P
D
D
DGR
T
GS
stg
DS
(
(
tot
(
critical
j
TYPE
SALES TYPE
N-CHANNEL 55V - 0.0065
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
DS
alignment
(on) = 0.0065
V
55 V
55 V
DSS
Parameter
steps
<0.008
<0.008
R
DS(on)
C
GS
= 25°C
GS
STB80NF55-08 STB80NF55-08-1
= 20 k )
therefore
B80NF55-08
B80NF55-08
P80NF55-08
MARKING
= 0)
C
C
80 A
80 A
= 25°C
= 100°C
I
D
a
STripFET™ II POWER MOSFET
Figure 1: Package
Figure 2: Internal Schematic Diagram
( ) Current limited by package
(1) Starting T
- 80A D
TO-263
D
2
PAK
PACKAGE
TO220
D²PAK
j
1
I²PAK
= 25
3
-55 to 175
o
Value
C, I
± 20
320
300
870
Rev.
2
55
55
80
80
2
PAK/I
D
STP80NF55-08
= 40A, V
1
TO-220
DD
2
= 30V
PAK/TO-220
1
TAPE & REEL
PACKAGING
2
3
TUBE
TUBE
I
2
TO-262
PAK
W/°C
Unit
mJ
°C
W
V
V
V
A
A
A
1 2
1/12
3

Related parts for STB80NF55-08-1

STB80NF55-08-1 Summary of contents

Page 1

... Total Dissipation at T tot Derating Factor AS (1) E Single Pulse Avalanche Energy T Storage Temperature stg T Operating Junction Temperature j ( Pulse width limited by safe operating area. March 2005 . STB80NF55-08 STB80NF55-08-1 - 80A D STripFET™ II POWER MOSFET Figure 1: Package R I DS(on TO-263 therefore a Figure 2: Internal Schematic Diagram MARKING ...

Page 2

... STB80NF55-08/-1 STP80NF55-08 Table 4: THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T Table 5: OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (*) ...

Page 3

... Source-drain Current (pulsed (*) V Forward On Voltage t Reverse Recovery Time rr Q Reverse Recovery Charge rr Reverse Recovery Current I RRM (*) Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area. Figure 3: Safe Operating Area STB80NF55-08/-1 STP80NF55-08 Test Conditions 4 (Resistive Load, Figure 17 44V 10V ...

Page 4

... STB80NF55-08/-1 STP80NF55-08 Figure 5: Output Characteristics Figure 7: Transconductance Figure 9: Gate Charge vs Gate-source Voltage 4/12 Figure 6: Transfer Characteristics Figure 8: Static Drain-source On Resistance Figure 10: Capacitance Variations ...

Page 5

... Figure 11: Normalized Gate Threshold Voltage vs Temperature Figure 13: Source-drain Diode Forward Characteristics . . STB80NF55-08/-1 STP80NF55-08 Figure 12: Normalized on Resistance vs Temperature Figure 14: Normalized Breakdown Voltage vs Temperature 5/12 ...

Page 6

... STB80NF55-08/-1 STP80NF55-08 Figure 15: Unclamped Inductive Load Test Circuit Figure 17: Switching Times Test Circuits For Resis- tive Load Figure 19: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/12 Figure 16: Unclamped Inductive Waveform Figure 18: Gate Charge test Circuit ...

Page 7

... STB80NF55-08/-1 STP80NF55-08 inch. TYP. TYP. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.315 0.409 0.334 0.208 0.624 0.055 0.069 0.126 0.016 0° ...

Page 8

... STB80NF55-08/-1 STP80NF55-08 TO-262 (I DIM. MIN. A 4.4 A1 2.49 B 0.7 B2 1.14 C 0.45 C2 1.23 D 8. 13.1 L1 3.48 L2 1.27 L2 8/12 2 PAK) MECHANICAL DATA mm TYP. MAX. MIN. 4.6 0.173 2.69 0.098 0.93 0.027 1.7 0.044 0.6 0.017 1.36 0.048 9.35 0.352 2.7 0.094 10.4 0.393 13 ...

Page 9

... F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 Dia STB80NF55-08/-1 STP80NF55-08 mm MAX. MIN. 4.60 0.173 1.32 0.048 2.72 0.094 1.27 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.7 0.094 10.40 0.393 16.4 14.0 ...

Page 10

... STB80NF55-08/-1 STP80NF55- PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 B0 15.7 15.9 0.618 D 1.5 1.6 0.059 D1 1.59 1.61 0.062 E 1.65 1.85 0.065 F 11.4 11.6 0.449 K0 4.8 5.0 0.189 P0 3.9 4.1 ...

Page 11

... Table 11: Revision History Date Revision 1.0 January 2005 STB80NF55-08/-1 STP80NF55-08 Description of Changes FIRST ISSUE 11/12 ...

Page 12

... STB80NF55-08/-1 STP80NF55-08 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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