IRFS4610 International Rectifier, IRFS4610 Datasheet - Page 3

• Manufacturer Part Number: IRFS4610
• Description: MOSFET N-CH 100V 73A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS4610

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 44A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 73A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 3550pF @ 50V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFS4610

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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
1000.0
100.0
1000
6000
5000
4000
3000
2000
1000
10.0
100
1.0
0.1
10
1
0
0.1
2.0
Fig 3. Typical Transfer Characteristics
1
Fig 1. Typical Output Characteristics
TOP
BOTTOM
T J = 175°C
V DS , Drain-to-Source Voltage (V)
3.0
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0
1
Ciss
Coss
Crss
V DS = 25V
≤ 60μs PULSE WIDTH
4.5V
T J = 25°C
5.0
≤ 60μs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
6.0
10
7.0
100
8.0
100
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
20
16
12
10
8
4
0
-60 -40 -20 0
0.1
0
Fig 2. Typical Output Characteristics
I D = 44A
TOP
BOTTOM
I D = 73A
V GS = 10V
20
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
40
V DS = 80V
VDS= 50V
VDS= 20V
1
20 40 60 80 100 120 140 160 180
60
≤ 60μs PULSE WIDTH
Tj = 175°C
4.5V
80
10
100
120
100
140
3