IRLR3705Z International Rectifier, IRLR3705Z Datasheet - Page 6

• Manufacturer Part Number: IRLR3705Z
• Description: MOSFET N-CH 55V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3705Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 5V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLR3705Z

0
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V
V DS
GS
Q
1K
GS
t p
t p
I AS
D.U.T
0.01 Ω
L
Charge
Q
Q
V
GD
G
DUT
(BR)DSS
L
15V
DRIVER
+
-
VCC
V DD
A
Fig 14. Threshold Voltage vs. Temperature
500
400
300
200
100
2.5
2.0
1.5
1.0
0.5
0.0
0
Fig 12c. Maximum Avalanche Energy
-75 -50 -25
25
Starting T J , Junction Temperature (°C)
50
vs. Drain Current
T J , Temperature ( °C )
0
75
25
100
50
75
125
www.irf.com
TOP
BOTTOM
I D = 250µA
I D = 150µA
I D = 50µA
100 125 150 175
150
5.3A
7.0A
42A
I D
175