STY60NK30Z STMicroelectronics, STY60NK30Z Datasheet - Page 2
![MOSFET N-CH 300V 60A MAX247](/photos/5/30/53064/max247_sml.jpg)
STY60NK30Z
Manufacturer Part Number
STY60NK30Z
Description
MOSFET N-CH 300V 60A MAX247
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STY60NK30Z.pdf
(8 pages)
Specifications of STY60NK30Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
220nC @ 10V
Input Capacitance (ciss) @ Vds
7200pF @ 25V
Power - Max
450W
Mounting Type
Through Hole
Package / Case
MAX247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.045 Ohm @ 10 V
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
60 A
Power Dissipation
450000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4432-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STY60NK30Z
Manufacturer:
ST
Quantity:
14 000
Part Number:
STY60NK30Z
Manufacturer:
ST
Quantity:
20 000
STY60NK30Z
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/8
V
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt (1)
SD
BV
ESD(G-S)
I
V
DM
P
V
V
E
T
I
DGR
TOT
I
I
AR
T
T
stg
DS
GS
AS
GSO
D
D
60A, di/dt 200A/µs, V
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100 pF, R=1.5 K
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
Parameter
j
DD
= 25 °C, I
V
(BR)DSS
Parameter
D
C
GS
= I
= 25°C
, T
GS
j
= 20 k )
max)
AR
j
Parameter
= 0)
T
, V
JMAX.
DD
C
C
Igs=± 1mA (Open Drain)
= 25°C
= 100°C
= 50 V)
Test Conditions
Min.
30
-55 to 150
Value
6000
± 30
37.5
3.57
0.28
300
300
240
450
300
4.5
60
30
Max Value
Typ.
0.7
60
Max.
W/°C
°C/W
°C/W
Unit
Unit
Unit
V/ns
°C
°C
A
V
W
J
V
V
V
A
A
A
V