IRF3000PBF International Rectifier, IRF3000PBF Datasheet - Page 6

• Manufacturer Part Number: IRF3000PBF
• Description: MOSFET N-CH 300V 1.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3000PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 960mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 730pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3000PBF

IRF3000PbF
I
AS
12V
Fig 15a&b. Unclamped Inductive Test circuit
6
V
Fig 14a&b. Basic Gate Charge Test Circuit
GS
Same Type as D.U.T.
0.50
0.46
0.42
0.38
0.34
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2µF
50KΩ
3mA
t p
0
Current Sampling Resistors
.3µF
I
G
V
2
(BR)DSS
D.U.T.
I
D
and Waveforms
and Waveform
I D , Drain Current (A)
+
4
-
V
DS
V GS = 10V
V
R G
6
GS
20V
V DS
t p
V
G
8
Q
I AS
GS
D.U.T
0.01 Ω
L
10
Charge
Q
Q
GD
G
12
15V
DRIVER
14
+
-
V DD
A
0.80
0.70
0.60
0.50
0.40
0.30
Fig 13. On-Resistance Vs. Gate Voltage
100
80
60
40
20
0
Fig 15c. Maximum Avalanche Energy
25
6
Starting T , Junction Temperature
V GS, Gate -to -Source Voltage (V)
50
8
Vs. Drain Current
I D = 0.96A
J
10
75
12
100
www.irf.com
TOP
BOTTOM
14
125
( C)
I D
°
0.9A
1.5A
1.9A
16
150