STB20NM60-1 STMicroelectronics, STB20NM60-1 Datasheet - Page 9

• Manufacturer Part Number: STB20NM60-1
• Description: MOSFET N-CH 600V 20A I2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB20NM60-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 192W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5383-5; STB20NM60-1

STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
3
Figure 15. Switching times test circuit for
Figure 17. Test circuit for inductive load
Figure 19. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 16. Gate charge test circuit
Figure 18. Unclamped inductive load test
Figure 20. Switching time waveform
circuit
Test circuit
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