STP8NM60 STMicroelectronics, STP8NM60 Datasheet - Page 7

• Manufacturer Part Number: STP8NM60
• Description: MOSFET N-CH 650V 8A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP8NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5397-5; STP8NM60

STP8NM60, STD5NM60, STB8NM60
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
vs temperature
characteristics
Figure 15. Normalized on resistance vs
temperature
Electrical characteristics
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