IXFV30N50PS IXYS, IXFV30N50PS Datasheet - Page 4

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IXFV30N50PS

Manufacturer Part Number
IXFV30N50PS
Description
MOSFET N-CH 500V 30A PLUS220-SMD
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFV30N50PS

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
4150pF @ 25V
Power - Max
460W
Mounting Type
Surface Mount
Package / Case
PLUS-220SMD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Forward Transconductance Gfs (max / Min)
27 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
460 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.2
Ciss, Typ, (pf)
4150
Qg, Typ, (nc)
70
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
460
Rthjc, Max, (ºc/w)
0.27
Package Style
PLUS220 SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
10
90
80
70
60
50
40
30
20
10
0
0.4
0
f = 1MHz
5
0.5
1.00
0.10
0.01
Fig. 11. Capacitance
Fig. 9. Source Current vs.
Source-To-Drain Voltage
10
0.1
T
0.6
J
= 125
15
V
V
S D
º
0.7
D S
C
- Volts
20
- Volts
0.8
C iss
C oss
C rs
25
Fig. 13. M axim um Tr ans ie nt The r m al Re s is tance
T
0.9
J
1
30
= 25
º
C
1
35
Pulse Width - milliseconds
1.1
40
10
100
10
10
9
8
7
6
5
4
3
2
1
0
1
10
0
R
T
T
IXFV 30N50P IXFV 30N50PS
V
I
I
IXFH 30N50P
D
G
J
C
DS(on)
DS
= 15A
= 10mA
= 150ºC
10
= 25ºC
= 250V
Fig. 10. Gate Charge
Limit
Fig. 12. Forw ard-Bias
Safe Operating Area
20
Q
100
G
- nanoCoulombs
V
30
D S
DC
100
- Volts
40
IXFT 30N50P
50
1000
60
100µs
1ms
10ms
25µs
1000
70

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