STW30NF20 STMicroelectronics, STW30NF20 Datasheet - Page 3
![MOSFET N-CH 200V 30A TO-247](/photos/5/30/53058/to-247_sml.jpg)
STW30NF20
Manufacturer Part Number
STW30NF20
Description
MOSFET N-CH 200V 30A TO-247
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STB30NF20.pdf
(16 pages)
Specifications of STW30NF20
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1597pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Polarity
N Channel
Continuous Drain Current Id
15A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
65mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.075 Ohms
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5989-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STW30NF20
Manufacturer:
ST
Quantity:
12 500
STP30NF20 - STW30NF20 - STB30NF20
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2.
Table 3.
Table 4.
Symbol
Symbol
dv/dt
Symbol
I
I
P
R
DM
R
V
SD
V
T
E
T
I
I
TOT
T
I
thJC
GS
thJA
DS
stg
D
D
AR
AS
J
(1)
l
(2)
≤ 30A, di/dt ≤ 200A/µs, V
Absolute maximum ratings
Thermal data
Avalanche data
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Maximum lead temperature for soldering
purpose
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting
Tj=25°C, I
D
=I
AR
Parameter
Parameter
Parameter
DD
, V
= 80%V
DD
C
= 25°C
=50V)
GS
= 0)
(BR)DSS
C
C
=100°C
= 25°C
TO-220/
D²PAK
62.5
-55 to 150
Value
200
±20
120
125
300
30
19
10
Value
1
140
30
1
TO-247
50
Electrical ratings
W/°C
V/ns
Unit
°C/W
°C/W
Unit
°C
°C
Unit
W
V
V
A
A
A
mJ
A
3/16