IRF7705GTRPBF International Rectifier, IRF7705GTRPBF Datasheet - Page 8

• Manufacturer Part Number: IRF7705GTRPBF
• Description: MOSFET P-CH 30V 8A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7705GTRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 88nC @ 10V
• Input Capacitance (ciss) @ Vds: 2774pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -8A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: -10V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 8 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 58 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7705GTRPBFTR

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Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
TAC Fax: [phone]
Visit us at www.irf.com for sales contact information.05/2009
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