IXTQ102N15T IXYS, IXTQ102N15T Datasheet - Page 3
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IXTQ102N15T
Manufacturer Part Number
IXTQ102N15T
Description
MOSFET N-CH 150V 102A TO-3P
Manufacturer
IXYS
Datasheet
1.IXTP102N15T.pdf
(7 pages)
Specifications of IXTQ102N15T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
102A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
87nC @ 10V
Input Capacitance (ciss) @ Vds
5220pF @ 25V
Power - Max
455W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
102 A
Power Dissipation
455 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
102
Rds(on), Max, Tj=25°c, (?)
0.018
Ciss, Typ, (pf)
5220
Qg, Typ, (nc)
87
Trr, Typ, (ns)
97
Trr, Max, (ns)
-
Pd, (w)
455
Rthjc, Max, (k/w)
0.33
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2008 IXYS CORPORATION, All rights reserved
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
TO-3P (IXTQ) Outline
TO-247 (IXTH) Outline
Dim.
Terminals: 1 - Gate
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
Millimeter
4.7
2.2
2.2
1.0
1
.4
3 - Source
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
∅ P
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
2 - Drain
Tab - Drain
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216