STB13NM50N STMicroelectronics, STB13NM50N Datasheet - Page 8
![MOSFET N-CH 500V 12A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB13NM50N
Manufacturer Part Number
STB13NM50N
Description
MOSFET N-CH 500V 12A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP13NM50N.pdf
(18 pages)
Specifications of STB13NM50N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
320 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
960pF @ 50V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7932-2
STB13NM50N
STB13NM50N
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB13NM50N
Manufacturer:
ST
Quantity:
12 500
Company:
Part Number:
STB13NM50N-1
Manufacturer:
ST
Quantity:
12 500
Electrical characteristics
8/18
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
vs temperature
characteristics
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N
Figure 15. Normalized on resistance vs
Figure 17. Normalized BVdss vs temperature
temperature