2SK2231(Q) Toshiba, 2SK2231(Q) Datasheet - Page 6

• Manufacturer Part Number: 2SK2231(Q)
• Description: MOSFET N-CH 60V 5A 2-7B1B
• Manufacturer: Toshiba

Specifications of 2SK2231(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 370pF @ 10V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: 2-7B1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SK2231QT

Representative Product Data 2
Ta=25℃
2SA1244-Y(T6L1,NQ) Electrical characteristics distribution
Compared product
Compared product
Compared product
Compared product
-0.01
-0.1
150
130
110
-10
-100
Measurement condition：I
-1.4
-1.3
-1.2
-1.1
-0.9
-0.8
-0.7
-0.6
90
70
50
30
10
Measurement condition：V
-1
-90
-80
-70
-60
-50
-40
-30
Measurement condition：V
Measurement condition：I
-1
V
V
(BR)CEO
h
BE(sat)
FE(2)
I
CBO
-50V MIN.
-1µA MAX.
-1.2V MAX.
30 MIN.
(3) V
(7) V
(1) I
(5) h
(BR)CEO
BE(sat)
FE(2)
CBO
Halogen free product
Halogen free product
Halogen free product
Halogen free product
-0.01
-0.1
150
130
110
-10
C
-100
-1
90
70
50
30
10
-1.4
-1.3
-1.2
-1.1
-0.9
-0.8
-0.7
-0.6
=-3A,I
-90
-80
-70
-60
-50
-40
-30
C
CE
CB
-1
=-10mA,I
=-1V,I
=-50V,I
V
hFE(2)
V
(BR)CEO
B
BE(sat)
I
=-0.15A
CBO
-50V MIN.
-1µA MAX.
C
=-3A
-1.2V MAX.
B
E
=0
=0
30 MIN.
Compared product
Compared product
Compared product
-0.01
300
250
200
150
100
-0.5
-0.4
-0.3
-0.2
-0.1
-0.1
50
Measurement condition：I
-10
Measurement condition：V
-0
-1
Measurement condition：V
VCE(sat)
h
FE(1)
I
EBO
-0.4V MAX.
-1µA MAX.
240 MAX.
70 MIN.
(6) V
(4) h
(2) I
CE(sat)
FE(1)
EBO
Halogen free product
Halogen free product
Halogen free product
300
250
200
150
100
-0.01
-0.5
-0.4
-0.3
-0.2
-0.1
C
50
-0.1
-10
=-3A,I
-0
CE
-1
EB
=-1V,I
=-5V,I
VCE(sat)
h
B
FE(1)
I
=-0.15A
EBO
C
-1µA MAX.
=-1A
-0.4V MAX.
C
240 MAX.
=0
70 MIN.