MTP30P06V ON Semiconductor, MTP30P06V Datasheet

MOSFET P-CH 60V 30A TO-220AB

MTP30P06V

Manufacturer Part Number
MTP30P06V
Description
MOSFET P-CH 60V 30A TO-220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of MTP30P06V

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
80 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
2190pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MTP30P06VOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MTP30P06V
Manufacturer:
LT
Quantity:
20 000
MTP30P06V
Power MOSFET
30 Amps, 60 Volts
P−Channel TO−220
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 6
MAXIMUM RATINGS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t
Drain Current − Continuous @ 25°C
Drain Current
Drain Current
Total Power Dissipation @ 25°C
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
I
Thermal Resistance − Junction−to−Case
Thermal Resistance
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 seconds
L
This Power MOSFET is designed to withstand high energy in the
Avalanche Energy Specified
I
Pb−Free Package is Available*
DD
= 30 Apk, L = 1.0 mH, R
DSS
= 25 Vdc, V
and V
DS(on)
− Continuous @ 100°C
− Single Pulse (t
GS
Rating
p
J
≤ 10 ms)
= 10 Vdc, Peak
− Junction−to−Ambient
= 25°C
Specified at Elevated Temperature
(T
GS
G
C
= 25 W)
= 25°C unless otherwise noted)
= 1.0 MW)
Preferred Device
p
≤ 10 ms)
Symbol
T
V
V
V
R
R
J
V
E
I
DGR
GSM
P
, T
DSS
T
I
I
DM
qJC
qJA
GS
AS
D
D
D
L
stg
−55 to 175
Value
± 15
± 25
0.83
62.5
105
125
450
260
1.2
60
60
30
19
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
mJ
°C
°C
W
1
MTP30P06V
MTP30P06VG
Preferred devices are recommended choices for future use
and best overall value.
2
3
Device
30 AMPERES, 60 VOLTS
MTP30P06V = Device Code
A
Y
WW
G
ORDERING INFORMATION
4
G
R
CASE 221A
TO−220AB
http://onsemi.com
STYLE 5
DS(on)
TO−220AB
TO−220AB
P−Channel
(Pb−Free)
Package
= Location Code
= Year
= Work Week
= Pb−Free Package
D
AND PIN ASSIGNMENT
= 80 mW
MARKING DIAGRAM
Publication Order Number:
Gate
S
1
MTP30P06VG
AYWW
Drain
Drain
50 Units/Rail
50 Units/Rail
MTP30P06V/D
4
2
Shipping
3
Source

Related parts for MTP30P06V

MTP30P06V Summary of contents

Page 1

... P−Channel MARKING DIAGRAM AND PIN ASSIGNMENT 4 4 Drain TO−220AB CASE 221A STYLE 5 MTP30P06VG AYWW 3 1 Gate 2 Drain MTP30P06V = Device Code A = Location Code Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping TO−220AB 50 Units/Rail TO−220AB 50 Units/Rail (Pb−Free) Publication Order Number: ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc 0.25 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 25° 10V DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL GATE CHARGE (nC) g Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS ...

Page 6

DS(on) SINGLE PULSE THERMAL LIMIT T = 25°C PACKAGE LIMIT C 100 100 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward ...

Page 7

... V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04 STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MTP30P06V/D ...

Related keywords