MTB50P03HDLT4 ON Semiconductor, MTB50P03HDLT4 Datasheet

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MTB50P03HDLT4

Manufacturer Part Number
MTB50P03HDLT4
Description
MOSFET P-CH 30V 50A D2PAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of MTB50P03HDLT4

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 25A, 5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 5V
Input Capacitance (ciss) @ Vds
4900pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MTB50P03HDLT4OSCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MTB50P03HDLT4G
Manufacturer:
ON
Quantity:
12 500
MTB50P03HDL
Power MOSFET
50 Amps, 30 Volts, Logic Level
P−Channel D
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 6
MAXIMUM RATINGS
Drain−Source Voltage
Drain−Gate Voltage (R
Gate−Source Voltage
− Continuous
− Non−Repetitive (t
Drain Current − Continuous
Drain Current
Drain Current
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ T
mounted with the minimum recommended pad size
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
I
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient, when mounted with the
minimum recommended pad size
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
L
This Power MOSFET is designed to withstand high energy in the
Discrete Fast Recovery Diode
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a
Diode is Characterized for Use in Bridge Circuits
I
Short Heatsink Tab Manufactured − Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Pb−Free Packages are Available
DD
= 50 Apk, L = 1.0 mH, R
DSS
= 25 Vdc, V
and V
DS(on)
− Continuous @ 100°C
− Single Pulse (t
GS
p
J
Rating
= 5.0 Vdc, Peak
≤ 10 ms)
= 25°C
Specified at Elevated Temperature
GS
2
PAK
(T
= 1.0 MW)
C
G
C
= 25°C unless otherwise noted)
= 25 W)
= 25°C, when
Preferred Device
p
≤ 10 ms)
Symbol
T
V
V
V
R
R
R
J
V
E
I
P
DGR
GSM
, T
T
DSS
DM
I
I
qJC
qJA
qJA
GS
D
D
AS
D
L
stg
− 55 to
Value
1250
62.5
± 20
150
125
150
260
±15
1.0
2.5
1.0
30
30
50
31
50
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
mJ
°C
°C
W
W
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
MTB50P03H = Device Code
A
Y
WW
G
ORDERING INFORMATION
3
G
2
R
MARKING DIAGRAM
& PIN ASSIGNMENT
Gate
http://onsemi.com
50 AMPERES
DS(on)
1
30 VOLTS
M
50P03HG
AYWW
P−Channel
= Assembly Location
= Year
= Work Week
= Pb−Free Package
4
Drain
Drain
D
4
2
Publication Order Number:
= 25 mW
S
TB
CASE 418B
STYLE 2
3
Source
D
MTB50P03HDL/D
2
PAK

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MTB50P03HDLT4 Summary of contents

Page 1

MTB50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level 2 P−Channel D PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage = 250 mAdc Vdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 100 T = 25° 4 0.2 0.4 0.6 0.8 1.0 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

... RR Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter t reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through ...

Page 6

The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T ...

Page 7

... Figure 15. Diode Reverse Recovery Waveform ORDERING INFORMATION Device MTB50P03HDL MTB50P03HDLG MTB50P03HDLT4 MTB50P03HDLT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MTB50P03HDL P (pk DUTY CYCLE 1.0E−03 1.0E− ...

Page 8

... PL 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MTB50P03HDL PACKAGE DIMENSIONS 2 D PAK 3 CASE 418B−04 ISSUE ...

Page 9

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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