MTD2955VT4 ON Semiconductor, MTD2955VT4 Datasheet
MTD2955VT4
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MTD2955VT4 Summary of contents
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MTD2955V Power MOSFET P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 0.25 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, ...
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TYPICAL ELECTRICAL CHARACTERISTICS 25° DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. ...
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Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...
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TOTAL CHARGE (nC) T Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS ...
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SINGLE PULSE T = 25° 100 1.0 R LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum ...
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... ORDERING INFORMATION Device MTD2955V MTD2955VG MTD2955V−1 MTD2955V−1G MTD2955VT4 MTD2955VT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DPAK−3 CASE 369C STYLE 2 Drain 1 Drain Gate Package DPAK− ...
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... 0.13 (0.005) M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK−3 CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6.20 3.0 0.244 0.118 2.58 ...
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... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...