NTJS4151PT1 ON Semiconductor, NTJS4151PT1 Datasheet - Page 4

• Manufacturer Part Number: NTJS4151PT1
• Description: MOSFET P-CH 20V 3.3A SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJS4151PT1

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 850pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTJS4151PT1OSCT

10000
1250
1000
1000
750
500
250
100
0
1
0
Figure 9. Resistive Switching Time Variation
Figure 7. Capacitance Variation
4
R
G
, GATE RESISTANCE (W)
Gate Resistance
8
C
ISS
10
t
f
t
r
t
d(off)
12
t
d(on)
V
T
J
16
GS
= 25°C
= 0 V
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100
20
4
2.5
1.5
0.5
5
4
3
2
1
0
3
2
1
0
0.4
0
Drain−to−Source Voltage versus Total Charge
Q
V
Figure 10. Diode Forward Voltage versus
DS
V
gs
T
GS
J
= 25°C
−V
= 0 V
2
Figure 8. Gate−to−Source and
0.5
SD
Q
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
G
gd
, TOTAL GATE CHARGE (nC)
4
0.6
Current
Q
T
6
0.7
8
I
T
D
J
= −3.3 A
V
0.8
= 25°C
GS
10
0.9
12
15
12
9
6
3
0