NTR2101PT1G ON Semiconductor, NTR2101PT1G Datasheet - Page 4
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NTR2101PT1G
Manufacturer Part Number
NTR2101PT1G
Description
MOSFET P-CH 8V 3.7A SOT-23
Manufacturer
ON Semiconductor
Type
Small Signalr
Specifications of NTR2101PT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 3.5A, 4.5V
Drain To Source Voltage (vdss)
8V
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Input Capacitance (ciss) @ Vds
1173pF @ 4V
Power - Max
960mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.052 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
9 S
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3.7 A
Power Dissipation
960 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.052Ohm
Drain-source On-volt
8V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (id) @ 25° C
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
NTR2101PT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTR2101PT1G
Manufacturer:
ON
Quantity:
3 000
Company:
Part Number:
NTR2101PT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTR2101PT1G
Manufacturer:
ON/安森美
Quantity:
20 000
2500
2000
1500
1000
1000
500
100
10
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
1
1
−4
V
I
V
D
DD
GS
Figure 9. Resistive Switching Time Variation
= −1.0 A
C
V
= −4.0 V
= −4.5 V
RSS
DS
−2
Figure 7. Capacitance Variation
= 0
−V
R
G
GS
versus Gate Resistance
, GATE RESISTANCE (W)
0
t
d(off)
−V
C
DS
ISS
V
GS
10
2
t
f
t
= 0
d(on)
C
t
OSS
r
4
T
J
= 25°C
6
http://onsemi.com
100
8
4
5
4
3
2
1
0
0
Drain−to−Source Voltage versus Total Charge
6
5
4
3
2
1
0
V
0.3
DS
Q
GS
2
V
T
Figure 10. Diode Forward Voltage versus
J
GS
Figure 8. Gate−to−Source and
= 25°C
−V
Q
0.45
= 0 V
G
SD
, TOTAL GATE CHARGE (nC)
4
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
DS
0.6
6
Q
T
Current
0.75
8
10
0.9
T
I
D
J
V
= −3.5 A
= 25°C
GS
12
1.05
14
5
4
3
2
1
0
1.2