2N7002LT1G ON Semiconductor, 2N7002LT1G Datasheet
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2N7002LT1G
Specifications of 2N7002LT1G
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2N7002LT1G Summary of contents
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... J stg +150 *Date Code orientation and/or position may vary depending upon manufacturing location. Device 2N7002LT1G 2N7002LT3G 2N7002LT1H 2N7002LT3H †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( mAdc Zero Gate Voltage Drain Current ( Vdc Gate−Body Leakage Current, Forward ( Vdc) GS ...
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TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1 25°C A 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 1.0 2.0 3.0 4.0 5.0 6 DRAIN SOURCE VOLTAGE (VOLTS) DS Figure 1. Ohmic Region 2.4 2 ...
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... SCALE 10:1 inches 0.8 0.031 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 MILLIMETERS INCHES MIN NOM ...