BS107AG ON Semiconductor, BS107AG Datasheet - Page 3

• Manufacturer Part Number: BS107AG
• Description: MOSFET N-CH 200V 250MA TO-92
• Manufacturer: ON Semiconductor

Specifications of BS107AG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.4 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 250mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 60pF @ 25V
• Power - Max: 350mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Current, Drain: 250 mA
• Package Type: TO-92 (TO-226)
• Polarization: N-Channel
• Power Dissipation: 350 mW
• Resistance, Drain To Source On: 4.9 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Transconductance, Forward: 400 Millimhos
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Gate To Source: ±20 VDC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: BS107AGOS

5.0
2.0
1.0
0.5
0.2
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
-55
0
0
-35
Figure 3. On Voltage versus Temperature
1.0
Figure 5. Transfer Characteristic
-15
2.0
V
V
GS
GS
T
J
, GATE - SOURCE VOLTAGE (VOLTS)
= 10 V
+5.0
V
, JUNCTION TEMPERATURE (°C)
3.0
GS
= 10 V
25
4.0
45
5.0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
65
6.0
85
7.0
Figure 7. Saturation Characteristic
250 mA
100 mA
1.0
105
8.0
V
DS
, DRAIN - SOURCE VOLTAGE (VOLTS)
BS107, BS107A
http://onsemi.com
125
9.0
145
2.0
10
3
200
180
160
140
120
100
0.7
0.6
0.5
0.3
0.2
0.1
0.4
80
60
40
20
3.0
0
0
0
C
2.0
rss
4.0
Figure 4. Capacitance Variation
4.0
Figure 6. Output Characteristic
V
V
10
DS
DS
10 V
, DRAIN - SOURCE VOLTAGE (VOLTS)
, DRAIN - SOURCE VOLTAGE (VOLTS)
6.0
5.0 V
4.0 V
3.0 V
10 V
5.0
8.0
20
10
30
12
14
V
GS
= 0 V
40
16
C
C
oss
iss
18
5.0 V
4.0 V
3.0 V
20
50