NTB13N10T4G ON Semiconductor, NTB13N10T4G Datasheet - Page 2

• Manufacturer Part Number: NTB13N10T4G
• Description: MOSFET N-CH 100V 13A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB13N10T4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 64.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTB13N10T4GOS

2. Indicates Pulse Test: P.W. = 300 ms max, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperature.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Notes 2 and 3)
BODY−DRAIN DIODE RATINGS (Note 2)
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Drain−to−Source Breakdown Voltage
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
Drain−to−Source On−Voltage
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Diode Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
NTB13N10
NTB13N10G
NTB13N10T4
NTB13N10T4G
(V
(V
(V
V
(V
(V
(V
DS
GS
GS
GS
GS
GS
GS
= V
= 0 V, I
= 0 V, V
= 0 V, V
= 10 V, I
= 10 V, I
= 10 V, I
GS,
I
D
D
DS
DS
D
D
D
= 250 mA)
= 250 mA)
= 6.5 A)
= 6.5 A, T
= 13 A)
= 100 V, T
= 100 V, T
Device
J
J
J
= 125°C)
DS
= 25°C)
= 125°C)
Characteristic
GS
= 15 V, I
= $20 V, V
(T
(I
S
D
C
= 13 A, V
= 25°C unless otherwise noted)
= 6.5 A)
V
(V
(V
(V
(I
(I
GS
DS
DS
S
S
DD
DS
dI
= 13 A, V
= 13 A, V
= 0)
= 10 V, R
S
= 25 V, V
f = 1.0 MHz)
= 80 V, I
= 80 V, I
V
/dt = 100 A/ms)
GS
GS
= 10 V)
= 0 V, T
http://onsemi.com
GS
GS
G
D
D
GS
NTB13N10
= 9.1 W)
= 13 A,
= 13 A,
= 0 V)
= 0 V,
= 0 V,
J
= 125°C)
2
(Pb−Free)
(Pb−Free)
Package
D
D
D
D
2
2
2
2
PAK
PAK
PAK
PAK
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
C
Q
DS(on)
DS(on)
C
V
GS(th)
C
Q
Q
g
d(on)
d(off)
Q
DSS
GSS
t
t
t
FS
oss
t
t
SD
rss
RR
iss
rr
a
b
tot
gs
gd
r
f
Min
100
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
800 Units / Tape & Reel
800 Units / Tape & Reel
50 Units / Rail
50 Units / Rail
Shipping
0.130
0.250
−7.6
1.82
0.98
0.88
Typ
147
390
115
3.2
6.0
3.0
7.0
0.3
35
40
20
36
14
85
60
28
11
−
−
−
−
†
0.165
0.400
± 100
Max
2.34
550
160
5.0
4.0
1.3
50
70
20
80
40
70
20
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
mhos
Unit
nA
nC
mC
mA
pF
ns
ns
W
V
V
V
V