NTMS3P03R2G ON Semiconductor, NTMS3P03R2G Datasheet - Page 3

• Manufacturer Part Number: NTMS3P03R2G
• Description: MOSFET P-CH 30V 2.34A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMS3P03R2G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.34A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 24V
• Power - Max: 730mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.085 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 3.05 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMS3P03R2GOS

5. Handling precautions to protect against electrostatic discharge is mandatory.
6. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Notes 6 & 7)
BODY-DRAIN DIODE RATINGS (Note 6)
Drain-to-Source Breakdown Voltage
(V
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
(V
Gate-Body Leakage Current
(V
Gate-Body Leakage Current
(V
Gate Threshold Voltage
(V
Temperature Coefficient (Negative)
Static Drain-to-Source On-State Resistance
(V
(V
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
GS
DS
DS
GS
GS
DS
GS
GS
= -30 Vdc, V
= -30 Vdc, V
= V
= 0 Vdc, I
= -20 Vdc, V
= +20 Vdc, V
= -10 Vdc, I
= -4.5 Vdc, I
GS
, I
D
D
= -250 mAdc)
= -250 mAdc)
D
D
GS
GS
DS
DS
= -3.05 Adc)
= -1.5 Adc)
= 0 Vdc, T
= 0 Vdc, T
= 0 Vdc)
= 0 Vdc)
DS
Characteristic
J
J
= -15 Vdc, I
= 25°C)
= 125°C)
(I
S
(T
= -3.05 Adc, V
(V
(V
J
(V
(I
DD
= 25°C unless otherwise noted) (Note 5)
(I
S
DD
D
DS
S
= -3.05 Adc, V
= -3.05 Adc)
= -24 Vdc, I
= -3.05 Adc, V
= -24 Vdc, I
= -24 Vdc, V
dI
V
(V
V
V
I
D
S
GS
GS
GS
f = 1.0 MHz)
R
R
DS
/dt = 100 A/ms)
= -3.05 Adc)
G
G
= -4.5 Vdc,
= -10 Vdc,
= -10 Vdc,
= -24 Vdc,
= 6.0 W)
= 6.0 W)
GS
http://onsemi.com
NTMS3P03R2
D
= 0 V, T
D
GS
GS
= -3.05 Adc,
= -1.5 Adc,
GS
= 0 Vdc,
= 0 Vdc,
= 0 V)
J
3
= 125°C)
V
Symbol
R
V
(BR)DSS
t
t
t
t
I
I
I
C
Q
DS(on)
C
V
GS(th)
C
Q
Q
Q
g
d(on)
d(off)
d(on)
d(off)
DSS
GSS
GSS
t
t
t
FS
oss
t
t
t
t
SD
rss
RR
iss
rr
a
b
tot
gs
gd
r
f
r
f
-1.0
Min
-30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.063
0.090
-0.96
-0.78
-1.7
0.03
Typ
-30
520
170
3.6
5.0
2.0
4.5
70
12
16
45
45
16
42
32
35
16
34
18
16
-
-
-
-
-
0.085
0.115
-1.25
-100
Max
-1.0
-2.5
-10
100
750
325
135
22
30
80
80
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
mV/°C
Mhos
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
nC
mC
pF
ns
ns
ns
W