NTMS3P03R2G ON Semiconductor, NTMS3P03R2G Datasheet - Page 3

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NTMS3P03R2G

Manufacturer Part Number
NTMS3P03R2G
Description
MOSFET P-CH 30V 2.34A 8-SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTMS3P03R2G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
85 mOhm @ 3.05A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.34A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
750pF @ 24V
Power - Max
730mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Dual Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.085 Ohms
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 3.05 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTMS3P03R2GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMS3P03R2G
Manufacturer:
ON/安森美
Quantity:
20 000
Final Product/Process Change Notification #16142
ELECTRICAL CHARACTERISTIC SUMMARY:
There is no change in electrical parametric performance. Characterization data is available
upon request.
CHANGED PART IDENTIFICATION:
SO8 Products assembled with the Copper Wire from the ON Semiconductor facility in
Carmona, Philippines will have a Finish Good Date Code representing Work Week 47, 2008
or newer.
Issue Date: 20-Aug-2008
Rev.14 Jun 2007
Page 3 of 4

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