MTB50P03HDLG ON Semiconductor, MTB50P03HDLG Datasheet - Page 7
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MTB50P03HDLG
Manufacturer Part Number
MTB50P03HDLG
Description
MOSFET P-CH 30V 50A D2PAK
Manufacturer
ON Semiconductor
Datasheet
1.MTB50P03HDLT4.pdf
(9 pages)
Specifications of MTB50P03HDLG
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 25A, 5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 5V
Input Capacitance (ciss) @ Vds
4900pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MTB50P03HDLG
MTB50P03HDLGOS
MTB50P03HDLGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MTB50P03HDLG
Manufacturer:
MOT/ON
Quantity:
12 500
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MTB50P03HDL
MTB50P03HDLG
MTB50P03HDLT4
MTB50P03HDLT4G
Figure 15. Diode Reverse Recovery Waveform
0.01
1.0
0.1
1.0E−05
I
S
D = 0.5
0.2
0.1
0.05
0.02
t
p
SINGLE PULSE
Device
0.01
di/dt
1.0E−04
t
a
t
rr
t
b
I
S
TYPICAL ELECTRICAL CHARACTERISTICS
0.25 I
S
1.0E−03
Figure 14. Thermal Response
TIME
http://onsemi.com
MTB50P03HDL
t, TIME (s)
1.0E−02
7
(Pb−Free)
(Pb−Free)
Package
D
D
D
D
2
2
2
2
PAK
PAK
PAK
PAK
2.5
2.0
1.5
0.5
P
3
1
0
(pk)
25
DUTY CYCLE, D = t
t
1
Figure 16. D
t
2
1.0E−01
R
Board material = 0.065 mil FR−4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
50
qJA
T
= 50°C/W
A
, AMBIENT TEMPERATURE (°C)
1
/t
2
2
PAK Power Derating Curve
75
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
(t) = r(t) R
− T
1.0E+00
800 / Tape & Reel
C
100
50 Units / Rail
= P
Shipping
qJC
(pk)
1
R
qJC
(t)
125
†
1.0E+01
150