MTB50P03HDLG ON Semiconductor, MTB50P03HDLG Datasheet - Page 7

• Manufacturer Part Number: MTB50P03HDLG
• Description: MOSFET P-CH 30V 50A D2PAK
• Manufacturer: ON Semiconductor

Specifications of MTB50P03HDLG

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 5V
• Input Capacitance (ciss) @ Vds: 4900pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MTB50P03HDLG; MTB50P03HDLGOS

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MTB50P03HDL
MTB50P03HDLG
MTB50P03HDLT4
MTB50P03HDLT4G
Figure 15. Diode Reverse Recovery Waveform
0.01
1.0
0.1
1.0E−05
I
S
D = 0.5
0.2
0.1
0.05
0.02
t
p
SINGLE PULSE
Device
0.01
di/dt
1.0E−04
t
a
t
rr
t
b
I
S
TYPICAL ELECTRICAL CHARACTERISTICS
0.25 I
S
1.0E−03
Figure 14. Thermal Response
TIME
http://onsemi.com
MTB50P03HDL
t, TIME (s)
1.0E−02
7
(Pb−Free)
(Pb−Free)
Package
D
D
D
D
2
2
2
2
PAK
PAK
PAK
PAK
2.5
2.0
1.5
0.5
P
3
1
0
(pk)
25
DUTY CYCLE, D = t
t
1
Figure 16. D
t
2
1.0E−01
R
Board material = 0.065 mil FR−4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
50
qJA
T
= 50°C/W
A
, AMBIENT TEMPERATURE (°C)
1
/t
2
2
PAK Power Derating Curve
75
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
(t) = r(t) R
− T
1.0E+00
800 / Tape & Reel
C
100
50 Units / Rail
= P
Shipping
qJC
(pk)
1
R
qJC
(t)
125
†
1.0E+01
150