NTB5605PT4G ON Semiconductor, NTB5605PT4G Datasheet - Page 3

• Manufacturer Part Number: NTB5605PT4G
• Description: MOSFET P-CH 60V 18.5A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB5605PT4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 140 mOhm @ 8.5A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 5V
• Input Capacitance (ciss) @ Vds: 1190pF @ 25V
• Power - Max: 88W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.14 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18.5 A
• Power Dissipation: 88000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.45
0.35
0.25
0.15
0.05
40
35
30
25
20
15
10
0.5
0.4
0.3
0.2
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
5
0
0
2
1
0
0
-50
0
V
V
V
V
T
Figure 3. On-Resistance vs. Drain Current and
GS
GS
GS
GS
J
-V
V
I
V
= 25°C
D
1
GS
GS
-25
= -10 V
= -7 V
= -8 V
Figure 5. On-Resistance Variation with
= -9 V
DS
= -8.5 A
Figure 1. On-Region Characteristics
= -5.0 V
= -5.0 V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
5
T
2
J
, JUNCTION TEMPERATURE (°C)
-I
0
D
3
, DRAIN CURRENT (AMPS)
10
25
Temperature
Temperature
4
T
T
J
T
J
= 125°C
J
= -55°C
= 25°C
15
5
50
6
75
20
7
100
V
V
V
GS
GS
V
GS
V
V
V
8
NTB5605P, NTB5605
GS
GS
GS
GS
= -5.5 V
= -4.5 V
= -3.5 V
25
= -3 V
125
= -4 V
= -6 V
= -5 V
http://onsemi.com
9
10
150
30
3
10000
0.225
0.175
0.125
0.075
0.025
1000
0.25
0.15
0.05
100
0.2
0.1
40
30
20
10
10
0
1
0
0
0
5
Figure 4. On-Resistance vs. Drain Current and
V
V
T
Figure 6. Drain-to-Source Leakage Current
GS
10
J
-V
DS
-V
= 25°C
1
3
DS
= 0 V
= -10 V
GS
Figure 2. Transfer Characteristics
15
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, GATE-TO-SOURCE VOLTAGE (VOLTS)
2
-I
6
D
20
T
, DRAIN CURRENT (AMPS)
J
= 25°C
3
25
9
Gate Voltage
vs. Voltage
T
T
T
V
J
J
V
J
4
GS
30
= -55°C
= 150°C
GS
= 125°C
12
= -10 V
= -5.0 V
35
5
15
40
T
6
J
= 125°C
45
18
7
50
21
8
8
55
24
60
9