NTD3055-094G ON Semiconductor, NTD3055-094G Datasheet - Page 6

• Manufacturer Part Number: NTD3055-094G
• Description: MOSFET N-CH 60V 12A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD3055-094G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 94 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.094 Ohms
• Forward Transconductance Gfs (max / Min): 6.7 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTD3055-094G; NTD3055-094GOS

100
0.1
10
1
0.1
0.01
1.0
0.1
V
SINGLE PULSE
T
GS
C
Figure 11. Maximum Rated Forward Biased
0.00001
= 25°C
V
0.02
D = 0.5
0.2
0.1
0.05
= 20 V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
SINGLE PULSE
Safe Operating Area
1
R
THERMAL LIMIT
PACKAGE LIMIT
0.01
DS(on)
0.0001
LIMIT
100 ms
1 ms
Figure 14. Diode Reverse Recovery Waveform
10
I
S
10 ms
0.001
Figure 13. Thermal Response
SAFE OPERATING AREA
t
p
10 ms
dc
http://onsemi.com
100
di/dt
t, TIME (ms)
t
a
6
t
0.01
rr
t
b
I
S
70
60
50
50
40
30
20
10
P
0.25 I
0
(pk)
25
Figure 12. Maximum Avalanche Energy versus
DUTY CYCLE, D = t
S
T
t
1
J
, STARTING JUNCTION TEMPERATURE (°C)
t
2
50
Starting Junction Temperature
0.1
TIME
1
75
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
100
(t) = r(t) R
- T
C
1
= P
125
(pk)
qJC
1
R
qJC
I
D
(t)
= 11 A
150
10
175